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- energy separation(energy difference)between the quantum dot (QD) ground and first-excited states 能量间隔
- Analysis byTransmission Electron Microscopy (TEM) has identified 分析
- Whilst同时
- Stacking Fault s (SF) and threading dislocations (TD) are often associated withthe large lattice mismatch in most III – V semiconductor films.与…有关
- the GaAs barrier layerwas divided in two parts分割
- a characteristicv-shape gliding有…特征
- Thepresence of these SFs is observed to create surface QDs被认为是
- Areas区域
- extending to延伸至
- In contrast to与…对比
- we wouldsuggest this could be related to我们认为
- dislocationsoccurring at the microscopic level 出现在
- migrate away from迁移开
- spectral response光谱响应
- in terms of根据,与…有关
- composition,content组分
- attractingstrong interest引起兴趣
- aspects such as许多方面例如
- As previously reported正如以前报道的
- Theemission wavelength of the QDs red-shifted by 300 nm红移了300nm
- As the compositionis increased, there is an increase in density and size随着…增加什么增加
- the reduction ofPL intensity for larger compositions occurs as a result of threading dislocations being formed
- suppressed by压制,抑制
- epilayer外延层
- variation变化
- interrupted growth method间断生长
- ion (Ar+) laser with 514.53 nm氩离子激光波长
- it can be seen that从…可以看出
- reveal a strongquantum localization effect展示
- Such ablue shift in EL wavelength could be attributed to the band-filling effect of localized energy states蓝移,归咎于,能带填充效应
- Ablueshift of 3 and 1.7 cm−1 蓝移
- Incorporating结合
- 3–1.6mm has beenachieved for InAs/GaAs QDs by实现
- are limited by性能局限于
- received littleattention to date现在已经没人关注
- spacer layer隔离层
- the initial 15 nm of theGaAs SPL was deposited at 5101C, following which the temperature was increased to 580 1 C for the remainder of the GaAs SPL随后
- thermal escape热逃逸
- QD ensembles量子点群
- the value ofE E值
- are dramaticallyreduced巨大的
- takes place发生,出现
- QD PL bandcaused by PL图,引起
- are taken into account考虑
- activeregion活性区
- verticalstrain coupling 垂直耦合
- sample c shows thehighest value (75 meV) followed by sample b with 60 meV and sample d with 56 meV排序
- is crucial for对…至关重要
- zero-dimensional structures零维结构
- involving涉及
- cap layer盖层
- With an increase in the excitation power (20 mW to100 mW) there is an increase in the contribution related to the excited state of sample
- one in whichthere are two ‘‘families’’ of QDs with different average sizes,一个…
- the thermal escape will produce ared-shift of P2 emission band产生红移
- anorder of magnitude lower少一个数量级
- Such phenomena support the hypothesis that我们认为
- made upof a sum of contributions of什么的相互作用
- With increasing temperature, there may be atransfer of carriers from larger to smaller QDs随着…增加
- A set of samples一系列
- epitaxy on(1 0 0) oriented外延在…100面
- As one can seethat 可以看出
- PL spectrawere fitted with a Gaussian profile拟合
- Thesmaller Stokes-type shift combining with the narrow PL linewidth suggests that两原因结合说明了什么
- is located at能级位于
- one can find that可以看出
- charge carriers载流子
- discrete energy level离散能级
- is strongly dependent on取决于
- ten-layer stack10叠层
- a new class of一新类别
- enabletailoring of the detection wavelength能够对探测波长进行裁剪
- bias dependenceof the responsivity响应率随偏压变化
- escape routes逃逸路线
- dual-color双色
- final states in the surroundingmatrix终态
- a bias tunableenergy separation 偏压可调的能级间隔
- energyintervals能级间隔
- is assignedto指定为
- In–Ga intermixing互混
- lateral size横向尺寸
- The volume of each QD is defined as hA/2with A the area and h the height 定义什么为什么
- capping layer盖层
- be of great potentialfor有很大潜力
- three dimensional carrier confinement of the QD三维限制效应 3D confinement
- interaction between相互作用
- suffer from承受 sustain
- spreads out to传播到
- The insert shows插图说明
- the increase of the quantumefficiency overcomes the increased dark current超过
- pushedthe response peak toward 推向
- wavefunction coupling波长耦合
- When positively biased当正偏压时
- artificial atom-like人工类原子
- hybrid混合
- wavelengthtuning波长调制
- significant impact on有重要影响
- (i.e. QDs)例如
- Top left panelshows左上图说明了
- photo-excited carriers光生载流子
- be compensatedin part by部分
- mesas台面
- blackbody source黑体源
- be coupled to被耦合到
- reflection grating反射光栅
- photolithographic techniques光印刷技术
- Indium-bump铟柱
- bias range from…to范围
- multi-spectral response多光谱响应
- spectral tuning光谱调制
- adjacent to临近
- the tailoringof detection wavelength 探测波长裁剪
- have an additionaladvantage of优势
- elevates抬高
- thesplitting of the single detection peak 探测峰的劈裂
- In principle原则上
- blocking layer阻挡层
- Additionally=in addition
- Relaxselection rule选择定则
- phonon bottleneckeffect声子瓶颈效应
- Systematic study of系统研究了
- Fullwidth half maximum of the spectral response 半高宽
- are of interestfor several applications 有兴趣
- outperformthe ones in the market胜过
- completed a detailed investigationof研究了
- bias-tunability电压调制性
- Some solutions tomitigate these problems 解决问题
- limited the manufacturing yield of large area focal-plane arrays量产
- carrier relaxation-times载流子弛豫时间
- the intricate dependenceof the operating wavelength on the size and shape of the dot后者依赖于前者
- random self-assembly process随机自组装过程
- Apart from除什么之外
- is estimated to估计为
- average spacing平均距离
- lateral coupling横向耦合
- a factor of 10十分之一
- Low temperature photocurrent peaksobserved at 120 and 148 meV were identified as 指认为
- intersubband transitions emanating from来自于
- night vision夜视
- The 3D confinement will give rise to产生
- the number of allowed dark current transitions跃迁数
- give rise to a photocurrent产生光电流
- a detailed understanding of all relevant transitionsoccurring in the detector is not yet gained 还没有很好的解决
- optical pumping光学泵浦
- is shownto be 认为是
- provide theflexibility to adjust the electronic states 调节的灵活性
- 60 Åin height and 220 Å in radius
- Repulsive相反的
- strain-compensated应变补偿
- impurities incorporated during the growth杂质掺杂
- sensitive layers活性层,敏感层
- inthe 25 – 400°C interval在…区间间隔
- Silver contacts proved to be ohmicthrough current – voltage measurements欧姆接触
- rectifying behavior整流特性
- no systematic investigation was carriedout on responsivity versus temperature 执行系统的研究
- in dark conditions在暗条件下
- cuton and cut off wavelengths 截止波长
- exhibited photoresponse peaking at 3.5 um波长在多少
- The operation principle of工作原理
- nominal Ge deposition thickness名义厚度
- Oneobvious feature is that 可以看出
- is consistent with与…一致
- with amain peak at around 3.5 um主峰
- the hole absorption of photons光子的空穴吸收
- are utilizedto用于
- night vision, and optical communication(有点)等等
- are particularly worthy of academic investigation值得,学术研究
- polarization selection rule偏振选择定则
- this Si-based detector hasthe advantage of the monolithic integration with the read-out circuit与硅读出电路集成
- cut downthe dark current降低暗电流
- added delta dope德尔塔掺杂
- the vertical alignment垂直耦合
- We report the摘要
- intensity ratio of强度比
- was accompanied by伴随着
- duringthe last decade 近十年来
- delta-function-like densitydelta函数
- two-dimensionalarray 二维阵列
- misfit dislocation nucleation位错成核
- were ascribed to归咎于
- This shift couldbe associated with phonon confinement 与…联系起来
- phonon replicas声子峰
- structure with h = 40 nmwith的用法
- the broad shape ofthe PL peak suggests a large inhomogeneity of the islands’ size distribution 物表明
- It is worth mentioning that值得一提的是
- induce the QD energyredshift 红移
- attributed to a type-IIband alignment II型能带
- cannot be不能,not是连着的
- This blueshift can be explained in termsof a type-II band lineup 蓝移, 以…有关
- the holes are trapped inthe Ge islands 位于
- increasedconfinement增强的限制
- holes in the wetting layer could betransferred to the islands转移
- One can note that可以看出
- good optical quality好的光学性质
- interdiffusionprocesses 互扩散
- spatiallyordered arrays 空间有序阵列
- in-plane ordering of the islands平面有序
- monolayer单原子层
- the island base量子点基底
- Theislands are oriented along directions close to [010] and朝向
- the net volume of净体积
- exceed超过
- vibration band震动峰
- transition point变化点
- The dependences ofhc on the thickness dSiGe is investigated临界厚度依赖于SiGe厚度
- Ge segregation偏析
- provides the best agreement betweenthe calculated and experimental data 相符合
- a part of一部分
- relying onobtained results, it can be assumed that 从得到的结果…可以看出
- spatial ordering空间有序
- interdiffusion processes扩散过程
- increasein Ge content leads to Ge含量的增加
- noticeably显著的
- mass transferfrom质量迁移
- the quantity of materialdiffused into the islands is equivalent to4 nm 等于
- is associated with归咎于
- island self-ordering自有序
- Another possible reason for另一个可能的问题
- we attributeto 我们认为
- dominant absorption bandspeaked主要吸收峰
- We tentativelypropose that我们暂时提出
- the electronsare free in the Si conduction band 电子是自由的
- P-polarizedabsorptions 偏振吸收
- quantum efficiency of about 0.015%of的用法
- wavelength range of范围
- relax the momentum conservation requirement缓解动量守恒
- still far from ideal远不如
- currentof 7 mA速流7mA
- intapping (contect) mode 轻巧或接触模式
- 3 nm tall3nm高
- By contrast作为对比
- are consistent with与…有关
- first-order opticalmode一介光学模式
- vibrational peaks振动峰
- the downward shift of theGe–Ge peak to 299 cm−1红移
- Within the frame of 在…框架下
- irrespective of不考虑
- contact angle接触角
- The interest ismainly driven by 兴趣
- type-II band alignmentII型能带排列
- degrade the qualities降低质量
- loading into the vacuum chamber装入腔体
- be decomposed into two Gaussianshape peaks 分解为
- shows strong blueshifts蓝移
- is believed to be相信是
- Coulomb charging effect库伦电荷效应
- are accompanied by伴随着
- give detailed insights into详细的了解
- relies on依赖于
- a changein shape in的写法
- are indicative for指认为
- It isnoticeable that值得注意的是
- The ratio of domes tohuts 比例的用法
- Isby a factor of two smaller than几分之几
- is in consistence with有关
- Itis established that得出
- A feature of particular interest is特别感兴趣的是
- AFM were used to characterize用来表征
- is in fact detrimental to对…有害,不利
- at theexpense of以…为代价
- penetrates through贯穿
- defect-free无缺陷的
- Owing to由于
- more uniform in sizein+名词,在…方面
- optical phonon frequencies光学声子频率
- it is an indicator on关于什么的指示
- perform=carry out 执行
- phonon assistedrecombination声子辅助复合
- increasingtendency for 趋势
- heteroepitaxialGe/Si systems系统
- optic-phonon modes光学振动模
- were investigated bya combination of Raman scatter spectra and photoluminescence. 结合
- is considered as;is correlating with认为是
- The intensities of the Ge–Ge peak IGe–Geand the Ge–Si peak IGe–Si are found to be reliable to determine 可靠的
- shows a good fit toour experimental results相符
- with respect to相对于…
- tentatively attributed to暂时的
- intensive studies大量研究
- wemainly deal with this issue by investigating处理
- A redshift of PLspectra is observed after annealing at temperature below 780 °C, whereas annealing above this temperature induces a blueshift. 然而
- PL signal recorded forGe/Si cluster single layer指认为
- we attempt to interpret these resultswithin a simple thermodynamic model 尝试解释,在..框架下
- The composition distribution of Ge islandsis also of importance重要
- most methodsused in addressing the composition of Ge islands探究
- provides the trigger to使…开始启动
- ring-like structure环状结构
- The first term第一个式子
- Note that here值得注意的是
- transport characteristics of特性
- Estimates show that测试表明
- there has beena surge of interest in 大量的
- in-plane confinement横向限制
- as a result of breaking of the polarization selectionrules偏振选择定则
- zero-dimensionalcharacter of the electronic spectrum零维
- render展现
- There are only few works announcingthe long-wave operation 报道
- was sandwiched inbetween sth and sth夹在
- high sheet density高密度
- the top portionof顶部
- were in good agreement with一致
- posea long-standing puzzle 提出问题
- Arich body of subsequent work大量的
- twokey aspects came to light 重要方面
- in view of考虑到
- Theamount of the strain大量的,修饰不可数
- with reference to关于
- The height and the base of the dots range from 8 to 15nm and from 140 to 200 nm, respectively, upon increasing the thickness of Si spacer from 14 to 100 nm/ upon increasing the thickness up to一旦…
- a strain field superpositionof buried dots应变场的交叠
- were explainedin terms of two possible contributions 关于
- a strained Si65Ge0.35quantum well, which, in turn, is incorporated ina Si matrix包含在
- the polarizationdependence of the induced PC后面依赖于前面
- elucidate the nature of photoresponse阐明….的本质
- normal incidence infrared radiation正入射红外辐射
- GeQDs enclosed in a silicon matrix 包含在
- We suspect that我们认为
- As stated before如前面所述
- Lorentzian decomposition of the spectra分峰
- This edge is tilted带边倾斜
- The value of the barrier height U0derived from P2 depends on the effective mass 依赖于
- energy difference between
- a new classof 一类
- It appears thatGe/Si quantum dots could combine the advantages of quantum dots as compared to quantum wells while keeping the compatibility with Si-based signal processing. 看起来,结合
- opens theroute to the realization of 实现
- the photoluminescencespectrum is dominated by the radiative recombination associated with the Ge dots. 占据
- The measurement is performed测试
- transverse-optical phonon-assisted recombination横向光学声子辅助复合
- along with伴随着
- is similar forA and B相似的
- the 160 meV resonance is quenched消失
- the temperature dependence onthe electric power依赖于
- be decomposed intotwo components分成
- The samples are here after referred to asGe300, Ge600, and Ge1500, respectively.在之后的文章表示为
- Then, a 10 nm thick Si1xGexlayer with x ranging from 0% to 20% was grown,followed by a Ge layer
- Since 因为
- The additional fluxof atoms流
- In order to test thisassumption为了证明这种假设
- Ge is depositedon a Si0.8Ge0.2 alloy沉积用被动
- could be invoked to explain用来解释
- elastic strain energystored in the predeposited Si1-xGex layer应变存储
- 2 displays显示
- Sth reveal that揭示了
- Itis very important to know非常重要
- Another attractive object另一个有趣的是
- However,is not clarified yet还没解决
- were chosen in such a way as to avoid在这种条件下 in sucha way that
- , and then,随后
- reaches a stationary value缓和
- provides the best agreement between一致
- it also increases Si content in islands and, as aresults, increase the critical volume 结果
- We are making emphasis on强调
- as it was noticedabove如上所述
- Increase in deposited Genominal thickness from 9 to 11 ML leads to增加什么,导致
- the average island height makes2 nmmake可以当is用
- the ratio ofisland heights versus their lateral sizes 比
- Special attention in this work is paid to注重
- in connection with与..有关
- We consider the doublet band behavior in sample B asrelated with 我们认为、有关
- We performedsth我们执行什么
- Both these facts give reasons toconsider this band as related with 可以解释,有关
- Islandsgrow;The islands were formed by 量子点生长
- The island coarsening量子点的粗化
- The intermixing between Si and Ge dominatedat higher temperatures 占据主导地位
- pyramids and domes appeared to coexistin a stable configuration
- However,the growth and evolution of islands prepared by IBSD has not been studied adequately还没人研究
- 密度大用greater
- clustering to form集聚形成
- approximately 60%of the islands were less than the aspect ratio of 1主语颠倒
- This is an implicationthat表明
- The short islands could grow up if the amount of Geincreased长大
- Subsequently随后
- occursvia a combination of发生,结合
- ,wherebysth do sth 通过上述这种方法
- statistical analysis of island size统计
- displays=show=operates=take over 显示了
- In succeeding sections=In what follows, 在下文中
- Wequantify this observation, identify the coarsening mechanisms 认为
- Sth contributes significantly to
- Arebeing fed by this reservoir of Ge atoms 水库,浸润层,提供
- Isevident in the appearance of证据
- is indicative ofOstwald ripening指示是熟化
- islands may communicate more effectively via surface diffusion at higher growth temperatures量子点扩散,交流
- a variety of recipes for不同的方法
- coalescence合并
- remarkable observations显著的观察
- Intermixing ofsth with sth
- larger particles grow at the expense ofsmaller particles代价
- ,yieldingsth 产生
- obeysthe same relationship遵循
- delay the onset of开始
- virtually=mostly大部分
- transform to/form
- a larger fraction of大部分
- substantialnumbers of大量的
- often coincide with有关,由于
- Further insightcan be gained by considering进一步考虑
- appear to似乎
- is likely to有可能
- to our knowledge众所周知
- present apossible scenario for方法
- undergoa morphological transition to承受
- understood on grounds of依据什么
- the growth topology of生长量子点图
- reached a level, where达到最大值
- It is noteworthy at thispoint that值得注意的是
- The island sizeis dominated by the balance of 由于
- , suggesting that
- gain insight into
- island populations量子点群
- dependence of total cluster volumeas a function of Ge indicates that依赖于
- Samples spanning the Ge coverage range from0<Ge<14.0 ML were grown在什么范围
- careful catalogingof the shape evolution of these islands as a function of growth conditions has not yet been performed 内容还没有解决
- were used to document
- coherent=dislocation-free
- present a detailed catalog of
- cross-sectionalline scans横截面
- we are able tomap island evolution for different growth temperatures阐明,阐述
- At the left-hand side of this cluster左手边
- It is wellknown that众所周知
- presentinga detailed analysis and discussion of阐述了
- in the timeinterval of 30–45 min between the formation of two successive dislocations 间隔
- Si atom has been transported intothe island迁移
- (see later)请看下文
- thorough investigation of全面的研究
- The authors applyselective wet chemical etching 采用
- evolves towardan intriguing semifacetted structure演变成
- an understanding of the capping process is of fundamental importance重要的
- The effect is temperature dependent温度依赖的
- the height scales高度尺寸
- presumably because大致归咎于
- misfit strain位错应变
- ,whichin turn affects转过来影响
- coincides with伴随着
- corresponding=related
- were characterized by atomic force microscopy表征
- The left column of Fig. 1左边一排
- Demonstrating/indicatingthat
- is mainly responsible for归咎于
- building blocks for future electronic or optoelectronic devices奠定基石
- remains still a matter of controversy/was not yet clearly identified/was not investigated in detail.还没解决
- straininduced triggering诱导的没有一杠
- temperature was ramped down/up温度降低、身高
- Standing from the viewpoint of the simulation
- Fig后面接的词A detailed investigation shows that;We find out that;It should be noted that;We can see that;In contrast with Ge islandsgrown on Si, we observe;It is revealed that;It was found out that
- a record speed of 12 GHz记录速率
- possess high mobility拥有
- In comparison to比较
- zoom-in view of缩放图
- KEEN attention has been drawn to the study注意
- These extraordinary features非凡的
- transfer yield is>99%专业率
- Overall=From the aforementioned analysis总的来说
- the flexible Ge diodeindicates a much lower turn-on voltage than Si diode, validating 证明了
- Very recently,最近
- with combined high and low temperaturehigh and low processes 结合
- As of today截至今天
- a handful of reports show少量的
- The TFTdenoted as TFT-2 indicated as(也是定义的意思) negative values定义
- is elaborated below叙述
- is of great interest感兴趣
- the implanted side of Ge wasin contact with glass substrate 连接在一起
- strengthenthe chemical bonds 强化
- may be an alternativeto 选择
- visible light可见光
- process flow工艺流程
- generatingsth生产
- The prospect isto integrate期望
- irregular shape不寻常的
- single-crystal Geis yet to demonstrate 因此
- performance tradeoff性能折衷
- Theoretical calculations have also been conducted执行
- The capacitanceis dependent on the series diode width and metal stack thickness依赖于
- To make a fair comparison比较
- Canhave better RF properties拥有
- not presented here due tothe length limit of this Letter
- make them superb candidates for 候选
- A considerable number of大量的
- critical dimensions极限尺寸
- Of more importance重要的是
- bulk wafer counterparts对等物
- lightly doped亲掺杂
- Vicat softeningpoint of PET substrates is 170°C
- stripping off剥离
- firmly contacted with牢固地
- theoretical analysis has been conducted执行
- In essence本质上
- Tiny/substantialchanges小大变化
- innate limitation固有的本质的
- Figure 1schematically illustrates
- de-convoluted using the Gaussian/Lorentzian function去复杂化
- photodetector under shiningof 633 nm light照射
- Figure 4plots画出了
- magnified image放大图
- As expected如预期的
- is speculated to be推导出
时态用法
摘要:一般现在时
引言:一般现在时,别人说用过去式,
- 别人发现什么it was found that sth done sth
- it indicates that说的内容用一般现在时
- 对于现在我们做的it is found that sth do sth
- study, investigation等要用过去式的被动was studied, was carried out,was observed,也可以用现在完成时,现在完成时和过去完成时区别只是起点不一样,一个是以现在为起点,一个以过去为起点。
- 陈述一种事实用一般现在时(可有引用文献)
- 涉及到figure这种词一般用现在时
实验:过去式
结果与讨论:一般用现在时,如果有人为因素,如我们做了什么事情,要用过去式,因为是过去做的。涉及实验部分也要用过去式。
结论:the experimental investigations revealed/It was shown that/It was revealed experimentally that后面加一般现在时陈述你之前得出的结果
- 注意点:当用到用什么设备测试时用过去时,当关于我们以前做了什么,执行什么动作时用过去式,但是如we believe,we find,we can see that,we observe观测到什么结果,这些词可不用过去式。可用could/would be done sth,讲到其他文献时用过去式
- 不可数名词一般不加the,要特指才加the,具体化,但是如the realizationof是固定用法,realization是不可数,
- 复数可以不加the,
- 中文里的这个,那个,某特定的,能指出来的就加,你都不清楚指不出的不加。
- 表示抽象意义、概念的不可数名词和复数不加the
- 组合词看特指没特指,没特指不加the,如deposited on Si substrate,deposited on the Si substrate
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